In addition to the eye-attracting processes such as photoetching, etching and film deposition, ion implantation is crucial in the chip manufacturing process. The ion implanter can implant the charged ions of specific elements into the semiconductor material with extremely high accuracy and efficiency, so as to accurately change the electrical properties of the material, providing indispensable technical support for chip manufacturing. Its working principle is as follows: producing the desired ions via an ion source, accelerating these ions to a predefined energy under the action of an electric field, and then accurately implanting the ions into a semiconductor material, thus achieving ion replacement or addition to further regulate the properties of the material.
According to Semiconductor Equipment and Materials International (SEMI) data, the global ion implanter market size has reached RMB27.6 billion in 2024, and is expected to rise to RMB30.7 billion in 2030. NAURA's move into the field of ion implanters will unlock a market space of RMB16 billion in China, which will strongly promote the advanced development of China's semiconductor equipment in the high-end market.
With more than twenty years of efforts in the research and development of semiconductor equipment, NAURA has accumulated rich experience and expertise in the key technological fields such as plasma control, electromagnetic field control, radio frequency technology, embedded development, algorithms and simulation.It has successfully established a comprehensive technological platform covering four major categories (including etching, film deposition, furnace tube and cleaning) and more than 300 types of equipment. Moreover, by continuous investment in new technological fields, NAURA has made many breakthroughs in the key technologies such as beam flow control, beam tuning algorithms and accurate dose control, and has independently developed high-end ion implanters with features such as high energy precision, good dose uniformity and high accuracy in implantation angle control.
